IRLML6401TRPBF, Transistor P-MOSFET 12V 4.3A [SOT-23-3] (IRLML6401TRPBF)

Photo 1/4 IRLML6401TRPBF, Transistor P-MOSFET 12V 4.3A [SOT-23-3] (IRLML6401TRPBF)
Images are for reference only,
see technical documentation
SKU
9000970119
Brand
Structure
P-channel
Slope of characteristic, S
8.6
Housing
Micro-3/SOT-23-3
Weight, g
0.05
All parameters
Datasheet
pdf, 822 КБ
All documents
6853 pcs. from the central warehouse, term 8 days
32 ֏
from 100 pcs.27 ֏
1 pcs. amount of 32 ֏
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Description

Field effect transistor P-channel 12V 4.3A 1.3W

Technical parameters

Structure P-channel
Maximum drain-source voltage Usi, V 12
Maximum drain-source current at 25 C Isi max..A 4.3
Maximum gate-source voltage Uzi max., V ±8
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on) 0.05 Ohm / 4.3A, 4.5V
Maximum power dissipation Psi max..W 1.3
Slope of characteristic, S 8.6
Housing Micro-3/SOT-23-3
Weight, g 0.05

Technical documentation

Datasheet
pdf, 822 КБ
IRLML6401-SOT-23
pdf, 1851 КБ

Delivery terms

Delivery to Yerevan

Office CHIP AND DIP 28 April1 free
HayPost 2 May1 1 650 ֏2
1 estimated delivery date depends on the date of payment or order confirmation
2 for parcels weighing up to 1 kg