SI2319CDS-T1-GE3-VB, TrenchFET Transistor P-channel 30V 5.6A [SOT-23-3 / TO-236]

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see technical documentation

SKU

9000982601

Brand

Structure

P-channel

Slope of characteristic, S

Housing

SOT-23-3

Weight, g

0.05

All parameters

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5017 pcs. from the central warehouse, term 8 days

121 ֏

from 100 pcs. — 92 ֏

1 pcs. amount of 121 ֏

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Structure	P-channel
Maximum drain-source voltage Usi, V	30
Maximum drain-source current at 25 C Isi max..A	5.6
Maximum gate-source voltage Uzi max., V	±20
Channel resistance in open state Rsi incl. (Max) at Id, Rds (on)	0.054 ohm/3.6A, 4.5V
Maximum power dissipation Psi max..W	2.5
Slope of characteristic, S	18
Housing	SOT-23-3
Weight, g	0.05