STB7NK80ZT4, Trans MOSFET N-CH 800V 5.2A 3-Pin(2+Tab) D2PAK T/R
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6000 шт., срок 7-9 недель
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Описание
Diodes, Transistors and Thyristors\FET Transistors\MOSFETs
Описание Транзистор: N-MOSFET, полевой, 800В, 3,3А, 125Вт, D2PAK Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Automotive | No |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
ECCN (US) | EAR99 |
Lead Shape | Gull-wing |
Maximum Continuous Drain Current (A) | 5.2 |
Maximum Drain Source Resistance (mOhm) | 1800@10V |
Maximum Drain Source Voltage (V) | 800 |
Maximum Gate Source Voltage (V) | ±30 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 125000 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 2 |
Pin Count | 3 |
PPAP | No |
Process Technology | SuperMESH |
Product Category | Power MOSFET |
Standard Package Name | TO-263 |
Supplier Package | D2PAK |
Supplier Temperature Grade | Industrial |
Tab | Tab |
Typical Fall Time (ns) | 20 |
Typical Gate Charge @ 10V (nC) | 40 |
Typical Gate Charge @ Vgs (nC) | 40@10V |
Typical Input Capacitance @ Vds (pF) | 1138@25V |
Typical Rise Time (ns) | 12 |
Typical Turn-Off Delay Time (ns) | 45 |
Typical Turn-On Delay Time (ns) | 20 |
Maximum Continuous Drain Current | 5.2 A |
Maximum Drain Source Resistance | 1.8 Ω |
Maximum Drain Source Voltage | 800 V |
Maximum Gate Source Voltage | -30 V, +30 V |
Maximum Gate Threshold Voltage | 4.5V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 125 W |
Minimum Gate Threshold Voltage | 3V |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Package Type | D2PAK(TO-263) |
Series | MDmesh, SuperMESH |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 40 nC @ 10 V |
Width | 10.4mm |
Current - Continuous Drain (Id) @ 25В°C | 5.2A(Tc) |
Drain to Source Voltage (Vdss) | 800V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 56nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1138pF @ 25V |
Manufacturer | STMicroelectronics |
Operating Temperature | -55В°C ~ 150В°C(TJ) |
Package / Case | TO-263-3, DВІPak(2 Leads+Tab), TO-263AB |
Power Dissipation (Max) | 125W(Tc) |
Rds On (Max) @ Id, Vgs | 1.8Ohm @ 2.6A, 10V |
Supplier Device Package | D2PAK |
Technology | MOSFET(Metal Oxide) |
Vgs (Max) | В±30V |
Vgs(th) (Max) @ Id | 4.5V @ 100ВµA |
Brand: | STMicroelectronics |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 1000 |
Fall Time: | 20 ns |
Forward Transconductance - Min: | 5 S |
Id - Continuous Drain Current: | 5.2 A |
Manufacturer: | STMicroelectronics |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package/Case: | D2PAK-3(TO-263-3) |
Pd - Power Dissipation: | 125 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 56 nC |
Rds On - Drain-Source Resistance: | 1.8 Ohms |
Rise Time: | 12 ns |
Series: | STB7NK80ZT4 |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Type: | MOSFET |
Typical Turn-Off Delay Time: | 45 ns |
Typical Turn-On Delay Time: | 20 ns |
Vds - Drain-Source Breakdown Voltage: | 800 V |
Vgs - Gate-Source Voltage: | -30 V, +30 V |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Вес, г | 1 |
Техническая документация
Datasheet
pdf, 935 КБ
Datasheet
pdf, 935 КБ
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 938 КБ
Datasheet STB7NK80ZT4
pdf, 917 КБ
Сроки доставки
Доставка в регион Ереван
Офис «ЧИП и ДИП» | 2 августа1 | бесплатно |
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2 для посылок массой до 1 кг
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