BSC032N04LSATMA1
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Описание
Электроэлемент
MOSFET, N-CH, 40V, 98A, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:98A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power
Технические параметры
Brand | Infineon Technologies |
Channel Mode | Enhancement |
Configuration | 1 N-Channel |
Factory Pack Quantity | 5000 |
Fall Time | 3 ns |
Forward Transconductance - Min | 75 S |
Height | 1.27 mm |
Id - Continuous Drain Current | 98 A |
Length | 5.9 mm |
Manufacturer | Infineon |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | TDSON-8 |
Packaging | Reel |
Part # Aliases | BSC032N04LS SP001067018 |
Pd - Power Dissipation | 52 W |
Product Category | MOSFET |
Qg - Gate Charge | 35 nC |
Rds On - Drain-Source Resistance | 2.5 mOhms |
Rise Time | 4 ns |
RoHS | Details |
Technology | Si |
Tradename | OptiMOS |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 19 ns |
Typical Turn-On Delay Time | 4 ns |
Vds - Drain-Source Breakdown Voltage | 40 V |
Vgs - Gate-Source Voltage | 20 V |
Vgs th - Gate-Source Threshold Voltage | 1.2 V |
Width | 5.15 mm |
Channel Type | N |
Maximum Continuous Drain Current | 98 A |
Maximum Drain Source Resistance | 0.0044 Ω |
Maximum Drain Source Voltage | 40 V |
Maximum Gate Threshold Voltage | 2V |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | SuperSO8 5x6 |
Pin Count | 8 |
Series | OptiMOS |
Transistor Material | Si |
Вес, г | 0.2 |
Техническая документация
Datasheet BSC032N04LS
pdf, 1459 КБ