BSC026NE2LS5ATMA1
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
2 000 ֏
Добавить в корзину 1 шт.
на сумму 2 000 ֏
Описание
Электроэлемент
MOSFET, N-CH, 25V, 82A, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:82A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Powe
Технические параметры
| Channel Mode | Enhancement |
| Continuous Drain Current | 24(A) |
| Drain-Source On-Volt | 25(V) |
| Gate-Source Voltage (Max) | 16(V) |
| Mounting | Surface Mount |
| Number of Elements | 1 |
| Operating Temp Range | -55C to 150C |
| Operating Temperature Classification | Military |
| Package Type | TDSON EP |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Polarity | N |
| Power Dissipation | 2.5(W) |
| Rad Hardened | No |
| Type | Power MOSFET |
| Channel Type | N |
| Maximum Continuous Drain Current | 82 A |
| Maximum Drain Source Voltage | 25 V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
Техническая документация
Datasheet BSC026NE2LS5ATMA1
pdf, 1277 КБ
Datasheet BSC026NE2LS5ATMA1
pdf, 1532 КБ
