IPD30N06S2L23ATMA3
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см. техническую документацию
1 920 ֏
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1 490 ֏
от 5 шт. —
1 190 ֏
от 10 шт. —
1 090 ֏
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Описание
Электроэлемент
MOSFET, AEC-Q101, N-CH, 55V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0159ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V
Технические параметры
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 2500 |
| Fall Time | 9 ns |
| Height | 2.3 mm |
| Id - Continuous Drain Current | 30 A |
| Length | 6.5 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-252-3 |
| Packaging | Reel |
| Part # Aliases | IPD30N06S2L-23 SP001061286 |
| Pd - Power Dissipation | 100 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 33 nC |
| Rds On - Drain-Source Resistance | 15.9 mOhms |
| Rise Time | 22 ns |
| RoHS | Details |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 33 ns |
| Typical Turn-On Delay Time | 7 ns |
| Unit Weight | 0.139332 oz |
| Vds - Drain-Source Breakdown Voltage | 55 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1.6 V |
| Width | 6.22 mm |
| Channel Type | N |
| Maximum Continuous Drain Current | 30 A |
| Package Type | PG-TO252-3-11 |
| Вес, г | 0.3 |
Техническая документация
Datasheet IPD30N06S2L23ATMA3
pdf, 148 КБ
