IPB60R120C7ATMA1
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см. техническую документацию
см. техническую документацию
5 800 ֏
от 2 шт. —
5 300 ֏
от 4 шт. —
4 850 ֏
Добавить в корзину 1 шт.
на сумму 5 800 ֏
Описание
Электроэлемент
Rds(On):0.103Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes |Infineon IPB60R120C7ATMA1
Технические параметры
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Id - Continuous Drain Current: | 19 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-263-3 |
| Part # Aliases: | IPB60R120C7 SP001385048 |
| Pd - Power Dissipation: | 92 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 34 nC |
| Rds On - Drain-Source Resistance: | 120 mOhms |
| Series: | CoolMOS C7 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | CoolMOS |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Вес, г | 2.139 |
Техническая документация
Datasheet
pdf, 1552 КБ
