IPA95R450P7XKSA1
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см. техническую документацию
3 870 ֏
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3 360 ֏
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3 020 ֏
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2 840 ֏
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Описание
Электроэлемент
MOSFET, 950V, 14A, 150DEG C, 30W; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:950V; On Resistance Rds(on):0.38ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Powe
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Maximum Continuous Drain Current - (A) | 14 |
| Maximum Drain Source Resistance - (mOhm) | 450@10V |
| Maximum Drain Source Voltage - (V) | 600 |
| Maximum Gate Source Voltage - (V) | 20 |
| Maximum Power Dissipation - (mW) | 30000 |
| Number of Elements per Chip | 1 |
| Operating Temperature - (??C) | -55~150 |
| Packaging | Tube |
| Pin Count | 3 |
| Supplier Package | TO-220FP |
| Typical Gate Charge @ 10V - (nC) | 35 |
| Typical Gate Charge @ Vgs - (nC) | 35@10V |
| Typical Input Capacitance @ Vds - (pF) | 1053@400V |
| Maximum Continuous Drain Current | 14 A |
| Maximum Drain Source Resistance | 0.45 Ω |
| Maximum Drain Source Voltage | 900 V |
| Maximum Gate Threshold Voltage | 3.5V |
| Mounting Type | Through Hole |
| Package Type | TO-220 FP |
| Series | CoolMOS |
| Transistor Material | Silicon |
| Вес, г | 0.256 |
Техническая документация
Datasheet IPA95R450P7XKSA1
pdf, 1119 КБ
