BSC123N10LSG
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см. техническую документацию
см. техническую документацию
3 020 ֏
от 2 шт. —
2 550 ֏
от 5 шт. —
2 240 ֏
от 10 шт. —
2 090 ֏
Добавить в корзину 1 шт.
на сумму 3 020 ֏
Описание
Электроэлемент
10.6 A, 100 V, 0.0123 ohm, N-CHANNEL, Si, POWER, MOSFET
Технические параметры
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | 1 N-Channel |
| Factory Pack Quantity | 5000 |
| Fall Time | 7 ns |
| Forward Transconductance - Min | 49 S |
| Height | 1.27 mm |
| Id - Continuous Drain Current | 71 A |
| Length | 5.9 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TDSON-8 |
| Packaging | Reel |
| Part # Aliases | BSC123N10LSGATMA1 BSC123N10LSGXT SP000379612 |
| Pd - Power Dissipation | 114 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 68 nC |
| Rds On - Drain-Source Resistance | 10 mOhms |
| Rise Time | 25 ns |
| RoHS | Details |
| Series | OptiMOS 2 |
| Technology | Si |
| Tradename | OptiMOS |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 41 ns |
| Typical Turn-On Delay Time | 18 ns |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V |
| Width | 5.15 mm |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Fall Time: | 7 ns |
| Forward Transconductance - Min: | 49 S |
| Id - Continuous Drain Current: | 71 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TDSON-8 |
| Part # Aliases: | BSC123N1LSGXT SP000379612 BSC123N10LSGATMA1 |
| Pd - Power Dissipation: | 114 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 68 nC |
| Rds On - Drain-Source Resistance: | 10 mOhms |
| Rise Time: | 25 ns |
| Series: | OptiMOS 2 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | OptiMOS |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 41 ns |
| Typical Turn-On Delay Time: | 18 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Вес, г | 0.12 |
Техническая документация
Datasheet BSC123N10LS G
pdf, 673 КБ
