IPB600N25N3G
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см. техническую документацию
4 550 ֏
от 2 шт. —
4 040 ֏
от 5 шт. —
3 650 ֏
от 7 шт. —
3 510 ֏
Добавить в корзину 1 шт.
на сумму 4 550 ֏
Описание
Электроэлемент
MOSFET N-Ch 250V 25A D2PAK-2 OptiMOS 3
Технические параметры
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 8 ns |
| Forward Transconductance - Min: | 24 S |
| Id - Continuous Drain Current: | 25 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-263-3 |
| Part # Aliases: | IPB6N25N3GXT SP000676408 IPB600N25N3GATMA1 |
| Pd - Power Dissipation: | 136 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 29 nC |
| Rds On - Drain-Source Resistance: | 51 mOhms |
| Rise Time: | 10 ns |
| Series: | OptiMOS 3 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | OptiMOS |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | OptiMOS 3 Power-Transistor |
| Typical Turn-Off Delay Time: | 22 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 250 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Вес, г | 1.625 |
Техническая документация
Datasheet IPB600N25N3 G
pdf, 629 КБ
