STP10NK80Z
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см. техническую документацию
см. техническую документацию
8 шт. с центрального склада, срок 2-3 недели
3 230 ֏
от 2 шт. —
2 720 ֏
от 5 шт. —
2 370 ֏
Добавить в корзину 1 шт.
на сумму 3 230 ֏
Альтернативные предложения3
Описание
Электроэлемент
Описание Транзистор: N-MOSFET, полевой, 800В, 6А, 160Вт, TO220-3 Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand | STMicroelectronics |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 1000 |
| Fall Time | 17 ns |
| Forward Transconductance - Min | 9.6 S |
| Height | 9.15 mm |
| Id - Continuous Drain Current | 9 A |
| Length | 10.4 mm |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 160 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 72 nC |
| Rds On - Drain-Source Resistance | 900 mOhms |
| Rise Time | 20 ns |
| RoHS | Details |
| Series | N-channel MDmesh |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 65 ns |
| Typical Turn-On Delay Time | 30 ns |
| Vds - Drain-Source Breakdown Voltage | 800 V |
| Vgs - Gate-Source Voltage | 30 V |
| Width | 4.6 mm |
| Channel Type | N |
| Maximum Continuous Drain Current | 9 A |
| Maximum Drain Source Resistance | 900 mΩ |
| Maximum Drain Source Voltage | 800 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Power Dissipation | 160 W |
| Minimum Gate Threshold Voltage | 3V |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-220 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 72 nC @ 10 V |
| Automotive | No |
| ECCN (US) | EAR99 |
| Lead Shape | Through Hole |
| Maximum Continuous Drain Current (A) | 9 |
| Maximum Drain Source Resistance (MOhm) | 900@10V |
| Maximum Drain Source Voltage (V) | 800 |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 160000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Part Status | Active |
| PCB changed | 3 |
| PPAP | No |
| Process Technology | SuperMESH |
| Standard Package Name | TO |
| Supplier Package | TO-220AB |
| Supplier Temperature Grade | Industrial |
| Tab | Tab |
| Typical Fall Time (ns) | 17 |
| Typical Gate Charge @ 10V (nC) | 72 |
| Typical Gate Charge @ Vgs (nC) | 72@10V |
| Typical Input Capacitance @ Vds (pF) | 2180@25V |
| Typical Rise Time (ns) | 20 |
| Typical Turn-Off Delay Time (ns) | 65 |
| Typical Turn-On Delay Time (ns) | 30 |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 17 ns |
| Forward Transconductance - Min: | 9.6 S |
| Id - Continuous Drain Current: | 9 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 160 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 72 nC |
| Rds On - Drain-Source Resistance: | 900 mOhms |
| Rise Time: | 20 ns |
| Series: | STP10NK80Z |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | SuperMESH |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 65 ns |
| Typical Turn-On Delay Time: | 30 ns |
| Vds - Drain-Source Breakdown Voltage: | 800 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Вес, г | 3.5 |
Техническая документация
Datasheet
pdf, 439 КБ
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 438 КБ
Datasheet
pdf, 424 КБ
Datasheet STP10NK80ZFP
pdf, 439 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 30 мая1 | бесплатно |
| HayPost | 3 июня1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
