STP18N55M5
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
7 шт. с центрального склада, срок 3 недели
4 250 ֏
от 2 шт. —
3 740 ֏
от 5 шт. —
3 350 ֏
Добавить в корзину 1 шт.
на сумму 4 250 ֏
Альтернативные предложения1
Посмотреть аналоги1
Описание
Электроэлемент
Описание Транзистор: N-MOSFET, MDmesh™ V, полевой, 550В, 10А, 110Вт, TO220-3 Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Brand | STMicroelectronics |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 50 |
Fall Time | 13 ns |
Id - Continuous Drain Current | 13 A |
Manufacturer | STMicroelectronics |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Package / Case | TO-220-3 |
Packaging | Tube |
Pd - Power Dissipation | 90 W |
Product Category | MOSFET |
Qg - Gate Charge | 31 nC |
Rds On - Drain-Source Resistance | 240 mOhms |
Rise Time | 9.5 ns |
RoHS | Details |
Series | MDmesh M5 |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 29 ns |
Unit Weight | 0.01164 oz |
Vds - Drain-Source Breakdown Voltage | 550 V |
Vgs - Gate-Source Voltage | 25 V |
Brand: | STMicroelectronics |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 1000 |
Fall Time: | 13 ns |
Id - Continuous Drain Current: | 13 A |
Manufacturer: | STMicroelectronics |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-220-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 90 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 31 nC |
Rds On - Drain-Source Resistance: | 240 mOhms |
Rise Time: | 9.5 ns |
Series: | Mdmesh M5 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | MDmesh |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 29 ns |
Vds - Drain-Source Breakdown Voltage: | 550 V |
Vgs - Gate-Source Voltage: | -25 V, +25 V |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Channel Type | N |
Maximum Continuous Drain Current | 13 A |
Maximum Drain Source Resistance | 240 mΩ |
Maximum Drain Source Voltage | 550 V |
Maximum Gate Source Voltage | -25 V, +25 V |
Maximum Gate Threshold Voltage | 5V |
Maximum Power Dissipation | 90 W |
Minimum Gate Threshold Voltage | 3V |
Mounting Type | Through Hole |
Number of Elements per Chip | 1 |
Package Type | TO-220 |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 31 nC @ 10 V |
Width | 4.6mm |
Вес, г | 3.5 |
Техническая документация
Сроки доставки
Доставка в регион Ереван
Офис «ЧИП и ДИП» | 3 июня1 | бесплатно |
HayPost | 6 июня1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг