BSC034N03LSGATMA1
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см. техническую документацию
1 830 ֏
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1 410 ֏
от 5 шт. —
1 130 ֏
от 10 шт. —
1 030 ֏
Добавить в корзину 1 шт.
на сумму 1 830 ֏
Описание
Электроэлемент
Single N-Channel 30 V 3.4 mOhm 39 nC OptiMOS Power Mosfet - TDSON-8
Технические параметры
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | 1 N-Channel |
| Factory Pack Quantity | 5000 |
| Fall Time | 4.6 ns |
| Forward Transconductance - Min | 45 S |
| Height | 1.27 mm |
| Id - Continuous Drain Current | 100 A |
| Length | 5.9 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TDSON-8 |
| Packaging | Reel |
| Part # Aliases | BSC034N03LS BSC034N03LSGXT G SP000475948 |
| Pd - Power Dissipation | 57 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 52 nC |
| Rds On - Drain-Source Resistance | 2.8 mOhms |
| Rise Time | 4.8 ns |
| RoHS | Details |
| Series | BSC034N03 |
| Technology | Si |
| Tradename | OptiMOS |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 28 ns |
| Typical Turn-On Delay Time | 6.9 ns |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Width | 5.15 mm |
| Channel Type | N |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Resistance | 0.0051 Ω |
| Maximum Drain Source Voltage | 30 V |
| Maximum Gate Threshold Voltage | 2.2V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SuperSO8 5x6 |
| Pin Count | 8 |
| Transistor Material | Si |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Fall Time: | 4.6 ns |
| Forward Transconductance - Min: | 45 S |
| Id - Continuous Drain Current: | 100 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TDSON-8 |
| Part # Aliases: | BSC034N03LS G SP000475948 |
| Pd - Power Dissipation: | 57 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 52 nC |
| Rds On - Drain-Source Resistance: | 2.8 mOhms |
| Rise Time: | 4.8 ns |
| Series: | OptiMOS 3 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | OptiMOS |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 28 ns |
| Typical Turn-On Delay Time: | 6.9 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Automotive | No |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | No Lead |
| Maximum Continuous Drain Current (A) | 100 |
| Maximum Drain Source Resistance (mOhm) | 3.4@10V |
| Maximum Drain Source Voltage (V) | 30 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 2.2 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 2500 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 400 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Part Status | Active |
| PCB changed | 8 |
| PPAP | No |
| Process Technology | OptiMOS |
| Standard Package Name | SON |
| Supplier Package | TDSON EP |
| Typical Fall Time (ns) | 4.6 |
| Typical Gate Charge @ Vgs (nC) | 18.8@4.5V |
| Typical Input Capacitance @ Vds (pF) | 3200@15V |
| Typical Rise Time (ns) | 4.8 |
| Typical Turn-Off Delay Time (ns) | 28 |
| Typical Turn-On Delay Time (ns) | 6.9 |
| Вес, г | 0.2 |
