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IRF7104

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1 010 ֏

Мин. кол-во для заказа 2 шт.

от 5 шт. — 790 ֏

от 9 шт. — 660 ֏

Добавить в корзину 2 шт. на сумму 2 020 ֏

Номенклатурный номер: 8002025080

Бренд: INFINEON TECHNOLOGIES AG.

Описание

Электроэлемент

MOSFET, DUAL P CH, -20V, -2.3A, SOIC-8; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-2.3A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.19ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltag

Технические параметры

Automotive	No
Channel Mode	Enhancement
Channel Type	P
Configuration	Dual Dual Drain
Maximum Continuous Drain Current - (A)	2.3
Maximum Drain Source Resistance - (mOhm)	250@10V
Maximum Drain Source Voltage - (V)	20
Maximum Gate Source Voltage - (V)	??12
Maximum Gate Threshold Voltage - (V)	3
Maximum Power Dissipation - (mW)	2000
Military	No
Number of Elements per Chip	2
Operating Temperature - (??C)	-55~150
Packaging	Tape and Reel
Pin Count	8
Standard Package Name	SOP
Supplier Package	SOIC
Typical Gate Charge @ 10V - (nC)	9.3
Typical Gate Charge @ Vgs - (nC)	9.3@10V
Typical Input Capacitance @ Vds - (pF)	290@15V
Typical Output Capacitance - (pF)	210
Maximum Continuous Drain Current	2.3 A
Maximum Drain Source Resistance	400 mΩ
Maximum Drain Source Voltage	20 V
Maximum Gate Source Voltage	-12 V, +12 V
Maximum Gate Threshold Voltage	3V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	2 W
Minimum Gate Threshold Voltage	1V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Package Type	SOIC
Series	HEXFET
Transistor Configuration	Isolated
Transistor Material	Si
Typical Gate Charge @ Vgs	9.3 nC @ 10 V
Width	4mm
Вес, г	0.15