BSS84PWH6327XTSA1
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см. техническую документацию
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Описание
Электроэлемент
MOSFET, P-CH, -60V, -0.15A, SOT-323-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-150mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):4.6ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:
Технические параметры
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 18000 |
| Fall Time | 20.5 ns |
| Forward Transconductance - Min | 80 mS |
| Height | 0.9 mm |
| Id - Continuous Drain Current | -150 mA |
| Length | 2 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOT-323-3 |
| Packaging | Reel |
| Part # Aliases | BSS84PW BSS84PWH6327XT H6327 SP000917564 |
| Pd - Power Dissipation | 300 mW |
| Product Category | MOSFET |
| Qg - Gate Charge | 1.5 nC |
| Rds On - Drain-Source Resistance | 4.6 Ohms |
| Rise Time | 16.2 ns |
| RoHS | Details |
| Series | BSS84 |
| Technology | Si |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Typical Turn-Off Delay Time | 8.6 ns |
| Typical Turn-On Delay Time | 6.7 ns |
| Vds - Drain-Source Breakdown Voltage | -60 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | -2 V |
| Width | 1.25 mm |
| Base Product Number | BSS84 -> |
| Current - Continuous Drain (Id) @ 25В°C | 150mA (Ta) |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| ECCN | EAR99 |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.5nC @ 10V |
| HTSUS | 8541.21.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 19.1pF @ 25V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Power Dissipation (Max) | 300mW (Ta) |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 150mA, 10V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | PG-SOT323-3 |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 2V @ 20ВµA |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 20.5 ns |
| Forward Transconductance - Min: | 80 mS |
| Id - Continuous Drain Current: | 150 mA |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-323-3 |
| Part # Aliases: | BSS84PW H6327 SP000917564 |
| Pd - Power Dissipation: | 300 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 1.5 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 4.6 Ohms |
| Rise Time: | 16.2 ns |
| Series: | BSS84 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 8.6 ns |
| Typical Turn-On Delay Time: | 6.7 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Вес, г | 0.048 |
Техническая документация
Datasheet
pdf, 431 КБ
Datasheet BSS84PWH6327XTSA1
pdf, 434 КБ
