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STD16N65M5

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см. техническую документацию

13 шт. с центрального склада, срок 3 недели

4 030 ֏

от 2 шт. — 3 500 ֏

от 5 шт. — 3 180 ֏

от 10 шт. — 2 990 ֏

Добавить в корзину 1 шт. на сумму 4 030 ֏

Альтернативные предложения3

Номенклатурный номер: 8002021881

Бренд: STMicroelectronics

Описание

Электроэлемент

Описание Транзистор: N-MOSFET, полевой, 710В, 12А, 90Вт, DPAK Характеристики

Категория	Транзистор
Тип	полевой
Вид	MOSFET

Технические параметры

Brand	STMicroelectronics
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	2500
Fall Time	7 ns
Id - Continuous Drain Current	12 A
Manufacturer	STMicroelectronics
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	TO-252-3
Packaging	Reel
Pd - Power Dissipation	90 W
Product Category	MOSFET
Rds On - Drain-Source Resistance	270 mOhms
Rise Time	9 ns
RoHS	Details
Series	MDmesh M5
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Type	Power MOSFETs
Typical Turn-Off Delay Time	30 ns
Typical Turn-On Delay Time	25 ns
Vds - Drain-Source Breakdown Voltage	650 V
Vgs - Gate-Source Voltage	25 V
кол-во в упаковке	2500
Channel Type	N
Maximum Continuous Drain Current	12 A
Maximum Drain Source Resistance	279 mΩ
Maximum Drain Source Voltage	650 V
Maximum Gate Source Voltage	-25 V, +25 V
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	90 W
Minimum Gate Threshold Voltage	3V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	DPAK(TO-252)
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	31 nC @ 10 V
Width	6.2mm
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	7 ns
Id - Continuous Drain Current:	12 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	TO-252-3
Pd - Power Dissipation:	90 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	31 nC
Rds On - Drain-Source Resistance:	270 mOhms
Rise Time:	9 ns
Series:	Mdmesh M5
Subcategory:	MOSFETs
Technology:	Si
Tradename:	MDmesh
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	Power MOSFETs
Typical Turn-Off Delay Time:	30 ns
Typical Turn-On Delay Time:	25 ns
Vds - Drain-Source Breakdown Voltage:	650 V
Vgs - Gate-Source Voltage:	-25 V, +25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Case	DPAK
Drain current	12A
Drain-source voltage	710V
Gate-source voltage	±25V
Kind of channel	enhanced
Kind of package	reel, tape
Mounting	SMD
On-state resistance	0.279Ω
Polarisation	unipolar
Power dissipation	90W
Type of transistor	N-MOSFET
Вес, г	0.33