FDN340P, Транзистор P-MOSFET, полевой, -20В, -2А, Idm -10А, 0,5Вт

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700 ֏

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Номенклатурный номер: 8002767503

Semiconductors\Transistors\Unipolar transistors\P channel transistors

Описание Транзистор P-MOSFET, полевой, -20В, -2А, Idm -10А, 0,5Вт

Case	SuperSOT-3
Drain current	-2A
Drain-source voltage	-20V
Gate charge	10nC
Gate-source voltage	±8V
Kind of channel	enhanced
Kind of package	reel, tape
Manufacturer	ONSEMI
Mounting	SMD
On-state resistance	0.11Ω
Polarisation	unipolar
Power dissipation	0.5W
Pulsed drain current	-10A
Technology	PowerTrench®
Type of transistor	P-MOSFET
Brand	ON Semiconductor/Fairchild
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	3000
Fall Time	9 ns
Forward Transconductance - Min	9 S
Height	1.12 mm
Id - Continuous Drain Current	-2 A
Length	2.9 mm
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	SSOT-3
Packaging	Reel
Part # Aliases	FDN340P_NL
Pd - Power Dissipation	500 mW(1/2 W)
Product	MOSFET Small Signal
Product Category	MOSFET
Rds On - Drain-Source Resistance	60 mOhms
Rise Time	9 ns
RoHS	Details
Series	FDN340P
Tradename	PowerTrench
Transistor Polarity	P-Channel
Transistor Type	1 P-Channel
Type	MOSFET
Typical Turn-Off Delay Time	27 ns
Typical Turn-On Delay Time	10 ns
Unit Weight	0.001058 oz
Vds - Drain-Source Breakdown Voltage	-20 V
Vgs - Gate-Source Voltage	8 V
Width	1.4 mm
Вес, г	0.04