FCP104N60F, MOSFET N-Channel SuperFET sup /sup II FRFET sup /sup MOSFET 600V, 37A, 104mO
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
7 600 ֏
от 10 шт. —
6 700 ֏
от 50 шт. —
4 000 ֏
от 100 шт. —
3 640 ֏
Добавить в корзину 1 шт.
на сумму 7 600 ֏
Описание
Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology.
Технические параметры
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 37 A |
Maximum Drain Source Resistance | 104 mΩ |
Maximum Drain Source Voltage | 600 V |
Maximum Gate Source Voltage | -30 V, +30 V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 357 W |
Minimum Gate Threshold Voltage | 3V |
Minimum Operating Temperature | -55 °C |
Mounting Type | Through Hole |
Number of Elements per Chip | 1 |
Package Type | TO-220 |
Pin Count | 3 |
Series | SuperFET II |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 110 nC @ 10 V |
Width | 4.672mm |
Continuous Drain Current | 37(A) |
Drain-Source On-Volt | 600(V) |
Gate-Source Voltage (Max) | '±20(V) |
Mounting | Through Hole |
Number of Elements | 1 |
Operating Temp Range | -55C to 150C |
Operating Temperature Classification | Military |
Packaging | Rail/Tube |
Polarity | N |
Power Dissipation | 357(W) |
Rad Hardened | No |
Вес, г | 40 |
Похожие товары