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BSS138K

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476 ֏

Мин. кол-во для заказа 2 шт.

от 5 шт. — 225 ֏

от 9 шт. — 161 ֏

Добавить в корзину 2 шт. на сумму 952 ֏

Номенклатурный номер: 8002983986

Бренд: ON Semiconductor***

Описание

Электроэлемент

MOSFET, N-CH, 50V, 0.22A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:220mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):1.6ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:600mV;

Технические параметры

Base Part Number	BSS138
Current - Continuous Drain (Id) @ 25В°C	220mA(Ta)
Drain to Source Voltage (Vdss)	50V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 2.5V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	58pF @ 25V
Manufacturer	ON Semiconductor
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 150В°C(TJ)
Package / Case	TO-236-3, SC-59, SOT-23-3
Packaging	Tape & Reel(TR)
Part Status	Active
Power Dissipation (Max)	350mW(Ta)
Rds On (Max) @ Id, Vgs	1.6Ohm @ 50mA, 5V
Series	-
Supplier Device Package	SOT-23-3
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±12V
Vgs(th) (Max) @ Id	1.2V @ 250ВµA
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	220 mA
Maximum Drain Source Resistance	2.5 Ω
Maximum Drain Source Voltage	50 V
Maximum Gate Source Voltage	-12 V, +12 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	350 mW
Minimum Gate Threshold Voltage	0.6V
Minimum Operating Temperature	-55 °C
Number of Elements per Chip	1
Package Type	SOT-23
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	2.4 nC @ 10 V
Width	1.3mm
Configuration	Single
Continuous Drain Current (Id)	220 mA
Drain-Source Voltage (Vds)	50 V
Fall Time	35 ns
Gate-Source Voltage	12 V
MSL	Level-1
ON Resistance (Rds(on))	2.5 Ohm
Operating Temperature Max.	150 °C
Operating Temperature Min.	-55 °C
Pins	3
Power Dissipation (Pd)	350 mW
Reflow Temperature Max.	260 °C
Rise Time	5 ns
Transistor Polarity	N-Channel
Turn-OFF Delay Time	60 ns
Turn-ON Delay Time	5 ns
Вес, г	0.05