Главная › Электронные компоненты › Транзисторы › Полевые (FETs, MOSFETs) › ST Microelectronics › STW6N95K5, Trans MOSFET N-CH 950V 9A ...

STW6N95K5, Trans MOSFET N-CH 950V 9A 3-Pin(3+Tab) TO-247 Tube

Изображения служат только для ознакомления,
см. техническую документацию

893 шт., срок 8-10 недель

2 080 ֏

Мин. кол-во для заказа 80 шт.

от 157 шт. — 1 990 ֏

от 444 шт. — 1 860 ֏

Добавить в корзину 80 шт. на сумму 166 400 ֏

Альтернативные предложения4

Номенклатурный номер: 8003336503

Бренд: STMicroelectronics

Описание

Semiconductor - Discrete > Transistors > FET - MOSFET

Latest Technologies in Power MOSFET and IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETS and IGBTs tailored to your specific application targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs and trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's latest 1200V SiC MOSFETs combine the industry's highest junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. For motor control, M series IGBTs offer an optimized tradeoff of VCE(SAT) and E(off) along with a rugged short circuit rating. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

Технические параметры

Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	600
Id - Continuous Drain Current:	9 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package/Case:	TO-247-3
Packaging:	Tube
Pd - Power Dissipation:	90 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	13 nC
Rds On - Drain-Source Resistance:	1.25 Ohms
Series:	STW6N95K5
Subcategory:	MOSFETs
Technology:	Si
Tradename:	MDmesh
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	950 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Channel Type	N Channel
Drain Source On State Resistance	1Ом
Power Dissipation	90Вт
Количество Выводов	3вывод(-ов)
Линейка Продукции	MDmesh K5
Максимальная Рабочая Температура	150°C
Монтаж транзистора	Through Hole
Напряжение Измерения Rds(on)	10В
Напряжение Истока-стока Vds	950В
Непрерывный Ток Стока	9А
Полярность Транзистора	N Канал
Пороговое Напряжение Vgs	4В
Рассеиваемая Мощность	90Вт
Сопротивление во Включенном Состоянии Rds(on)	1Ом
Стиль Корпуса Транзистора	TO-247
Brand	STMicroelectronics
Factory Pack Quantity	600
Id - Continuous Drain Current	9 A
Manufacturer	STMicroelectronics
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Package / Case	TO-247-3
Packaging	Tube
Pd - Power Dissipation	90 W
Product Category	MOSFET
Qg - Gate Charge	13 nC
Rds On - Drain-Source Resistance	1.25 Ohms
RoHS	Details
Series	MDmesh K5
Technology	Si
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	950 V
Vgs - Gate-Source Voltage	30 V
Вес, г	1