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CSD17579Q3A, Trans MOSFET N-CH Si 30V 20A 8-Pin VSONP EP T/R

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Номенклатурный номер: 8003337494

Бренд: Texas Instruments

Описание

Semiconductor - Discrete > Transistors > FET - MOSFET

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Технические параметры

Brand	Texas Instruments
Channel Mode	Enhancement
Configuration	Single
Development Kit	TPS25741EVM-802, TPS25741AEVM-802
Factory Pack Quantity	2500
Fall Time	1 ns
Forward Transconductance - Min	37 S
Id - Continuous Drain Current	39 A
Manufacturer	Texas Instruments
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number Of Channels	1 Channel
Package / Case	VSONP-8
Packaging	Cut Tape or Reel
Pd - Power Dissipation	29 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	15 nC
Rds On - Drain-Source Resistance	10.2 mOhms
Rise Time	5 ns
Series	CSD17579Q3A
Subcategory	MOSFETs
Technology	Si
Tradename	NexFET
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	11 ns
Typical Turn-On Delay Time	2 ns
Vds - Drain-Source Breakdown Voltage	30 V
Vgs - Gate-Source Voltage	10 V
Vgs Th - Gate-Source Threshold Voltage	1.1 V
Brand:	Texas Instruments
Channel Mode:	Enhancement
Configuration:	Single
Development Kit:	TPS25741EVM-802, TPS25741AEVM-802
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	1 ns
Forward Transconductance - Min:	37 S
Id - Continuous Drain Current:	39 A
Manufacturer:	Texas Instruments
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	VSONP-8
Pd - Power Dissipation:	29 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	15 nC
Rds On - Drain-Source Resistance:	10.2 mOhms
Rise Time:	5 ns
Series:	CSD17579Q3A
Subcategory:	MOSFETs
Technology:	Si
Tradename:	NexFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	11 ns
Typical Turn-On Delay Time:	2 ns
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.1 V
Вес, г	1