STB60NF06T4, MOSFET N-Ch 60 Volt 60 Amp
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Описание Транзистор N-МОП, полевой, 60В 60A 110Вт 0,016Ом DІPak
Технические параметры
Brand: | STMicroelectronics |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 1000 |
Fall Time: | 20 ns |
Forward Transconductance - Min: | 20 S |
Id - Continuous Drain Current: | 60 A |
Manufacturer: | STMicroelectronics |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -65 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | TO-263-3 |
Pd - Power Dissipation: | 110 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 66 nC |
Qualification: | AEC-Q101 |
Rds On - Drain-Source Resistance: | 15 mOhms |
Rise Time: | 108 ns |
Series: | STB60NF06 |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Type: | MOSFET |
Typical Turn-Off Delay Time: | 43 ns |
Typical Turn-On Delay Time: | 16 ns |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Automotive | Yes |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
ECCN (US) | EAR99 |
EU RoHS | Compliant with Exemption |
Lead Shape | Gull-wing |
Maximum Continuous Drain Current (A) | 60 |
Maximum Drain Source Resistance (mOhm) | 16@10V |
Maximum Drain Source Voltage (V) | 60 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 110000 |
Minimum Operating Temperature (°C) | -65 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 2 |
Pin Count | 3 |
PPAP | Unknown |
Product Category | Power MOSFET |
Standard Package Name | TO-263 |
Supplier Package | D2PAK |
Tab | Tab |
Typical Fall Time (ns) | 20 |
Typical Gate Charge @ 10V (nC) | 49 |
Typical Gate Charge @ Vgs (nC) | 49@10V |
Typical Input Capacitance @ Vds (pF) | 1810@25V |
Typical Rise Time (ns) | 108 |
Typical Turn-Off Delay Time (ns) | 43 |
Typical Turn-On Delay Time (ns) | 16 |
Case | D2PAK |
Drain current | 42A |
Drain-source voltage | 60V |
Features of semiconductor devices | ESD protected gate |
Gate-source voltage | ±20V |
Kind of channel | enhanced |
Kind of package | reel, tape |
Manufacturer | STMicroelectronics |
On-state resistance | 16mΩ |
Polarisation | unipolar |
Power dissipation | 110W |
Technology | SuperMesh™ |
Type of transistor | N-MOSFET |
Brand | STMicroelectronics |
Factory Pack Quantity | 1000 |
Fall Time | 20 ns |
Forward Transconductance - Min | 20 S |
Height | 4.6 mm |
Id - Continuous Drain Current | 60 A |
Length | 10.4 mm |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -65 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | TO-263-3 |
Pd - Power Dissipation | 110 W |
Rds On - Drain-Source Resistance | 15 mOhms |
Rise Time | 108 ns |
RoHS | Details |
Series | STB60NF06 |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Type | MOSFET |
Typical Turn-Off Delay Time | 43 ns |
Typical Turn-On Delay Time | 16 ns |
Vds - Drain-Source Breakdown Voltage | 60 V |
Vgs - Gate-Source Voltage | 20 V |
Width | 9.35 mm |
Вес, г | 3.95 |
Техническая документация
Datasheet
pdf, 394 КБ
Datasheet
pdf, 394 КБ
Datasheet STB60NF06T4
pdf, 410 КБ
STB60NF06T4
pdf, 398 КБ
Сроки доставки
Доставка в регион Ереван
Офис «ЧИП и ДИП» | 9 августа1 | бесплатно |
HayPost | 13 августа1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
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