CSD16406Q3, MOSFET N-Ch NexFET Power MOSFETs
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Texas Instruments NexFET™ Power MOSFETThe Texas Instruments N-Channel NexFET™ Power MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.
Технические параметры
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Fall Time: | 4.8 ns |
Id - Continuous Drain Current: | 60 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | VSON-CLIP-8 |
Pd - Power Dissipation: | 46 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 5.8 nC |
Rds On - Drain-Source Resistance: | 5.3 mOhms |
Rise Time: | 12.9 ns |
Series: | CSD16406Q3 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel Power MOSFET |
Typical Turn-Off Delay Time: | 8.5 ns |
Typical Turn-On Delay Time: | 7.3 ns |
Vds - Drain-Source Breakdown Voltage: | 25 V |
Vgs - Gate-Source Voltage: | -12 V, +16 V |
Vgs th - Gate-Source Threshold Voltage: | 1.4 V |
Transistor Polarity | N Channel; Continuous Drain Current Id |
Вес, г | 0.04 |
Техническая документация
Datasheet CSD16406Q3
pdf, 409 КБ
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