CSD16406Q3, MOSFET N-Ch NexFET Power MOSFETs

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Номенклатурный номер: 8004997174
Бренд: Texas Instruments

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Texas Instruments NexFET™ Power MOSFET
The Texas Instruments N-Channel NexFETPower MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.

Технические параметры

Brand: Texas Instruments
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 2500
Fall Time: 4.8 ns
Id - Continuous Drain Current: 60 A
Manufacturer: Texas Instruments
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package / Case: VSON-CLIP-8
Pd - Power Dissipation: 46 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 5.8 nC
Rds On - Drain-Source Resistance: 5.3 mOhms
Rise Time: 12.9 ns
Series: CSD16406Q3
Subcategory: MOSFETs
Technology: Si
Tradename: NexFET
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel Power MOSFET
Typical Turn-Off Delay Time: 8.5 ns
Typical Turn-On Delay Time: 7.3 ns
Vds - Drain-Source Breakdown Voltage: 25 V
Vgs - Gate-Source Voltage: -12 V, +16 V
Vgs th - Gate-Source Threshold Voltage: 1.4 V
Transistor Polarity N Channel; Continuous Drain Current Id
Вес, г 0.04

Техническая документация

Datasheet CSD16406Q3
pdf, 409 КБ