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CSD17506Q5A, MOSFET 30V,NCh NexFET Pwr MOSFET

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Номенклатурный номер: 8004997204

Бренд: Texas Instruments

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Texas Instruments NexFET™ Power MOSFET
The Texas Instruments N-Channel NexFET™ Power MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.

Технические параметры

Brand:	Texas Instruments
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	5.3 ns
Forward Transconductance - Min:	76 S
Id - Continuous Drain Current:	100 A
Manufacturer:	Texas Instruments
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	VSONP-8
Pd - Power Dissipation:	3.2 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	8.3 nC
Rds On - Drain-Source Resistance:	4 mOhms
Rise Time:	13 ns
Series:	CSD17506Q5A
Subcategory:	MOSFETs
Technology:	Si
Tradename:	NexFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	Power MOSFET
Typical Turn-Off Delay Time:	13 ns
Typical Turn-On Delay Time:	7.5 ns
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Automotive	No
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current - (A)	23
Maximum Drain Source Resistance - (mOhm)	4@10V
Maximum Drain Source Voltage - (V)	30
Maximum Gate Source Voltage - (V)	??20
Maximum Power Dissipation - (mW)	3200
Military	No
Number of Elements per Chip	1
Operating Temperature - (??C)	-55~150
Packaging	Tape and Reel
Pin Count	8
Process Technology	NexFET
Standard Package Name	SON
Supplier Package	VSONP EP
Typical Gate Charge @ Vgs - (nC)	8.3@4.5V
Typical Input Capacitance @ Vds - (pF)	1270@15V
Вес, кг	17.6