CSD17578Q3AT, MOSFET 30V NCh NexFET Pwr MOSFET

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Номенклатурный номер: 8004997219

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Описание Транзистор N-MOSFET, полевой, 30В, 20А, 37Вт, VSONP8 3,3x3,3мм Характеристики

Brand:	Texas Instruments
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	250
Fall Time:	1 ns
Forward Transconductance - Min:	48 S
Id - Continuous Drain Current:	20 A
Manufacturer:	Texas Instruments
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	VSONP-8
Pd - Power Dissipation:	37 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	7.9 nC
Rds On - Drain-Source Resistance:	8.2 mOhms
Rise Time:	6 ns
Series:	CSD17578Q3A
Subcategory:	MOSFETs
Technology:	Si
Tradename:	NexFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	13 ns
Typical Turn-On Delay Time:	2 ns
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Channel Type	N
Maximum Continuous Drain Current	14 V
Maximum Drain Source Voltage	30 V
Mounting Type	Surface Mount
Package Type	VSONP
Continuous Drain Current (Id)	20A
Drain Source On Resistance (RDS(on)@Vgs,Id)	7.3mΩ@10A, 10V
Drain Source Voltage (Vdss)	30V
Gate Threshold Voltage (Vgs(th)@Id)	1.9V@250uA
Input Capacitance (Ciss@Vds)	1.59nF@15V
Operating Temperature	-55℃~+150℃@(Tj)
Power Dissipation (Pd)	3.2W;37W
Total Gate Charge (Qg@Vgs)	22.2nC@10V
Type	null
Вес, г	66