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CSD17579Q3AT, MOSFET 30V NCh NexFET Pwr MOSFET

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Номенклатурный номер: 8004997220

Бренд: Texas Instruments

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Технические параметры

Brand:	Texas Instruments
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	250
Fall Time:	1 ns
Forward Transconductance - Min:	37 S
Id - Continuous Drain Current:	20 A
Manufacturer:	Texas Instruments
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	VSONP-8
Pd - Power Dissipation:	29 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	5.3 nC
Rds On - Drain-Source Resistance:	11.8 mOhms
Rise Time:	5 ns
Series:	CSD17579Q3A
Subcategory:	MOSFETs
Technology:	Si
Tradename:	NexFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	11 ns
Typical Turn-On Delay Time:	2 ns
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Вес, г	0.03