CSD18509Q5B, MOSFET 40V, N-channel NexFET Pwr MOSFET
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
NexFET™ Power MOSFETsTexas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Технические параметры
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Fall Time: | 11 ns |
Id - Continuous Drain Current: | 50 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | VSON-CLIP-8 |
Pd - Power Dissipation: | 195 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 150 nC |
Rds On - Drain-Source Resistance: | 1.3 mOhms |
Rise Time: | 19 ns |
Series: | CSD18509Q5B |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 57 ns |
Typical Turn-On Delay Time: | 9 ns |
Vds - Drain-Source Breakdown Voltage: | 40 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 1.4 V |
Brand | Texas Instruments |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 2500 |
Fall Time | 11 ns |
Id - Continuous Drain Current | 299 A |
Manufacturer | Texas Instruments |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Packaging | Reel |
Pd - Power Dissipation | 195 W |
Product Category | MOSFET |
Qg - Gate Charge | 150 nC |
Rds On - Drain-Source Resistance | 1.7 mOhms |
Rise Time | 19 ns |
RoHS | Details |
Series | CSD18509Q5B |
Technology | Si |
Tradename | NexFET |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 57 ns |
Typical Turn-On Delay Time | 9 ns |
Vds - Drain-Source Breakdown Voltage | 40 V |
Vgs - Gate-Source Voltage | +/-20 V |
Vgs th - Gate-Source Threshold Voltage | 1.4 V |
Вес, г | 8 |
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