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CSD18510KTT, MOSFET 40-V, N channel NexFET™ power MOSFET, single D2PAK, 1.7 mOhm 2-DDPAK/TO-263 -55 to 175

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см. техническую документацию

2 800 ֏

от 10 шт. — 2 190 ֏

от 100 шт. — 1 660 ֏

от 250 шт. — 1 480 ֏

Добавить в корзину 1 шт. на сумму 2 800 ֏

Номенклатурный номер: 8004997234

Бренд: Texas Instruments

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Технические параметры

Brand:	Texas Instruments
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	500
Fall Time:	8 ns
Forward Transconductance - Min:	330 S
Id - Continuous Drain Current:	200 A
Manufacturer:	Texas Instruments
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	TO-263-3
Pd - Power Dissipation:	250 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	153 nC
Rds On - Drain-Source Resistance:	2 mOhms
Rise Time:	8 ns
Series:	CSD18510KTT
Subcategory:	MOSFETs
Technology:	Si
Tradename:	NexFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	29 ns
Typical Turn-On Delay Time:	10 ns
Vds - Drain-Source Breakdown Voltage:	40 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.4 V
Continuous Drain Current (Id)	274A
Drain Source On Resistance (RDS(on)@Vgs,Id)	2.6mΩ@100A, 10V
Drain Source Voltage (Vdss)	40V
Gate Threshold Voltage (Vgs(th)@Id)	2.3V@250uA
Input Capacitance (Ciss@Vds)	11.4nF@15V
Operating Temperature	-55℃~+175℃@(Tj)
Power Dissipation (Pd)	250W
Total Gate Charge (Qg@Vgs)	132nC@10V
Type	null
Вес, г	8