CSD18531Q5A, MOSFET 60V N-Channel NexFET Power MOSFET
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Описание Транзистор N-MOSFET, полевой, 60В, 100А, 156Вт, VSONP8 5x6мм Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Development Kit: | DRV8711EVM |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Fall Time: | 2.7 ns |
Id - Continuous Drain Current: | 100 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | VSONP-8 |
Pd - Power Dissipation: | 156 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 36 nC |
Rds On - Drain-Source Resistance: | 4.6 mOhms |
Rise Time: | 7.8 ns |
Series: | CSD18531Q5A |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel Power MOSFET |
Typical Turn-Off Delay Time: | 20 ns |
Typical Turn-On Delay Time: | 4.4 ns |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
Brand | Texas Instruments |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 250 |
Fall Time | 2.7 ns |
Id - Continuous Drain Current | 134 A |
Manufacturer | Texas Instruments |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | VSON-8 |
Packaging | Reel |
Pd - Power Dissipation | 156 W |
Product Category | MOSFET |
Qg - Gate Charge | 36 nC |
Rds On - Drain-Source Resistance | 5.8 mOhms |
Rise Time | 7.8 ns |
RoHS | Details |
Series | CSD18531Q5A |
Technology | Si |
Tradename | NexFET |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 20 ns |
Typical Turn-On Delay Time | 4.4 ns |
Unit Weight | 0.000847 oz |
Vds - Drain-Source Breakdown Voltage | 60 V |
Vgs - Gate-Source Voltage | 20 V |
Vgs th - Gate-Source Threshold Voltage | 1.5 V |
Вес, г | 0.4 |
Техническая документация
Datasheet CSD18531Q5AT
pdf, 402 КБ
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