CSD18534Q5AT, MOSFET 60V,N-Ch NexFET Pwr MOSFET

Изображения служат только для ознакомления,
см. техническую документацию

2 100 ֏

от 10 шт. — 1 620 ֏

от 100 шт. — 1 230 ֏

от 250 шт. — 1 020 ֏

Добавить в корзину 1 шт. на сумму 2 100 ֏

Номенклатурный номер: 8004997254

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Описание Транзистор: N-MOSFET, полевой, 60В, 50А, 77Вт, VSONP8, 5x6мм Характеристики

Brand:	Texas Instruments
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	750
Fall Time:	2 ns
Forward Transconductance - Min:	72 S
Id - Continuous Drain Current:	50 A
Manufacturer:	Texas Instruments
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	VSONP-8
Pd - Power Dissipation:	77 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	22 nC
Rds On - Drain-Source Resistance:	9.8 mOhms
Rise Time:	5.5 ns
Series:	CSD18534Q5A
Subcategory:	MOSFETs
Technology:	Si
Tradename:	NexFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	15 ns
Typical Turn-On Delay Time:	5.2 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Continuous Drain Current (Id)	50A
Drain Source On Resistance (RDS(on)@Vgs,Id)	9.8mΩ@14A, 10V
Drain Source Voltage (Vdss)	60V
Gate Threshold Voltage (Vgs(th)@Id)	2.3V@250uA
Input Capacitance (Ciss@Vds)	1.77nF@30V
Operating Temperature	-55℃~+150℃@(Tj)
Power Dissipation (Pd)	3.1W;77W
Total Gate Charge (Qg@Vgs)	11.1nC@4.5V
Type	null
Вес, г	1