CSD18537NKCS, MOSFET 60V N-Channel NexFET Pwr MOSFET
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Описание Транзистор: N-MOSFET, полевой, 60В, 50А, 94Вт, TO220-3, 1,14-1,4мм Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 50 |
Fall Time: | 3.9 ns |
Forward Transconductance - Min: | 100 S |
Id - Continuous Drain Current: | 56 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package/Case: | TO-220-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 94 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 14 nC |
Rds On - Drain-Source Resistance: | 14 mOhms |
Rise Time: | 3.2 ns |
Series: | CSD18537NKCS |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 12.6 ns |
Typical Turn-On Delay Time: | 4.5 ns |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.6 V |
Base Product Number | CSD18537 -> |
Current - Continuous Drain (Id) @ 25В°C | 50A (Tc) |
Drain to Source Voltage (Vdss) | 60V |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
ECCN | EAR99 |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
HTSUS | 8541.29.0095 |
Input Capacitance (Ciss) (Max) @ Vds | 1480pF @ 30V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Through Hole |
Operating Temperature | -55В°C ~ 150В°C (TJ) |
Package | TubeTube |
Package / Case | TO-220-3 |
Power Dissipation (Max) | 94W (Tc) |
Rds On (Max) @ Id, Vgs | 14mOhm @ 25A, 10V |
REACH Status | REACH Affected |
RoHS Status | ROHS3 Compliant |
Supplier Device Package | TO-220-3 |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | В±20V |
Vgs(th) (Max) @ Id | 3.5V @ 250ВµA |
Вес, г | 2 |
Техническая документация
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