Главная › Электронные компоненты › Транзисторы › Полевые (FETs, MOSFETs) › Texas Instruments › CSD19502Q5BT, MOSFET N-Channel, 3.4mOhm 80V

CSD19502Q5BT, MOSFET N-Channel, 3.4mOhm 80V

Изображения служат только для ознакомления,
см. техническую документацию

2 630 ֏

от 10 шт. — 2 060 ֏

от 100 шт. — 1 540 ֏

от 250 шт. — 1 400 ֏

Добавить в корзину 1 шт. на сумму 2 630 ֏

Номенклатурный номер: 8004997267

Бренд: Texas Instruments

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Q g and Q d and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

Технические параметры

Brand:	Texas Instruments
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	250
Fall Time:	7 ns
Forward Transconductance - Min:	88 S
Id - Continuous Drain Current:	100 A
Manufacturer:	Texas Instruments
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	VSON-CLIP-8
Pd - Power Dissipation:	195 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	48 nC
Rds On - Drain-Source Resistance:	4.1 mOhms
Rise Time:	6 ns
Series:	CSD19502Q5B
Subcategory:	MOSFETs
Technology:	Si
Tradename:	NexFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	22 ns
Typical Turn-On Delay Time:	8 ns
Vds - Drain-Source Breakdown Voltage:	80 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2.2 V
Channel Mode	Enhancement
Channel Type	N
Forward Diode Voltage	1V
Maximum Continuous Drain Current	157 A
Maximum Drain Source Resistance	4.8 mΩ
Maximum Drain Source Voltage	80 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	3.3V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	195 W
Minimum Gate Threshold Voltage	2.2V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	VSON-CLIP
Pin Count	8
Series	NexFET
Transistor Configuration	Single
Typical Gate Charge @ Vgs	130 nC @ 10 V
Width	5.1mm
Вес, г	0.13