VN10KN3-G, MOSFET 60V 5Ohm

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Номенклатурный номер: 8005187657

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET
N-канал 60 В 310 мА (Tj) 1 Вт (Tc) сквозное отверстие TO-92-3

Технические параметры

Brand: Microchip Technology
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 1000
Forward Transconductance - Min: 100 mmho
Id - Continuous Drain Current: 310 mA
Manufacturer: Microchip
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: Through Hole
Number of Channels: 1 Channel
Package / Case: TO-92-3
Packaging: Bulk
Pd - Power Dissipation: 1 W
Product Category: MOSFET
Product Type: MOSFET
Rds On - Drain-Source Resistance: 5 Ohms
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Type: FET
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs - Gate-Source Voltage: -30 V, +30 V
Vgs th - Gate-Source Threshold Voltage: 800 mV
Base Product Number VN10KN3 ->
Current - Continuous Drain (Id) @ 25В°C 310mA (Tj)
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
ECCN EAR99
FET Type N-Channel
HTSUS 8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Through Hole
Operating Temperature -55В°C ~ 150В°C (TJ)
Package Bulk
Package / Case TO-226-3, TO-92-3 (TO-226AA)
PCN Assembly/Origin http://www.microchip.com/mymicrochip/NotificationD
PCN Packaging http://www.microchip.com/mymicrochip/NotificationD
Power Dissipation (Max) 1W (Tc)
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V
REACH Status REACH Unaffected
RoHS Status ROHS3 Compliant
Supplier Device Package TO-92-3
Technology MOSFET (Metal Oxide)
Vgs (Max) В±30V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Channel Mode Enhancement
Channel Type N
Forward Diode Voltage 0.8V
Maximum Continuous Drain Current 310 mA
Maximum Drain Source Resistance 7.5 Ω
Maximum Drain Source Voltage 60 V
Maximum Gate Source Voltage 30 V
Maximum Gate Threshold Voltage 2.5V
Maximum Operating Temperature +150 °C
Maximum Power Dissipation 1 W
Minimum Gate Threshold Voltage 0.8V
Minimum Operating Temperature -55 °C
Number of Elements per Chip 1
Package Type TO-92
Pin Count 3
Series VN10K
Transistor Configuration Single
Width 4.06mm
Вес, г 0.2

Техническая документация

Datasheet
pdf, 575 КБ
Datasheet VN10KN3-G
pdf, 626 КБ