CSD18536KTTT, MOSFET 60-V, N channel NexFET™ power MOSFET, single D2PAK, 1.6 mOhm 2-DDPAK/TO-263 -55 to 175

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Номенклатурный номер: 8005467038

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Описание Транзистор: N-MOSFET, полевой, 60В, 200А, 375Вт, D2PAK Характеристики

Brand:	Texas Instruments
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	150
Fall Time:	4 ns
Forward Transconductance - Min:	312 S
Id - Continuous Drain Current:	200 A
Manufacturer:	Texas Instruments
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	TO-263-3
Pd - Power Dissipation:	375 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	140 nC
Rds On - Drain-Source Resistance:	1.7 mOhms
Rise Time:	5 ns
Series:	CSD18536KTT
Subcategory:	MOSFETs
Technology:	Si
Tradename:	NexFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	24 ns
Typical Turn-On Delay Time:	11 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.8 V
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	200 A
Maximum Drain Source Voltage	60 V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	D²PAK
Pin Count	3
Transistor Material	Silicon
Вес, кг	8.13