CSD17570Q5BT
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
3 720 ֏
от 10 шт. —
2 850 ֏
от 100 шт. —
1 990 ֏
от 250 шт. —
1 930 ֏
Добавить в корзину 1 шт.
на сумму 3 720 ֏
Описание
NexFET™ Power MOSFETs
Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 250 |
| Id - Continuous Drain Current: | 100 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | VSON-CLIP-8 |
| Pd - Power Dissipation: | 3.2 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 93 nC |
| Rds On - Drain-Source Resistance: | 740 uOhms |
| Series: | CSD17570Q5B |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
Похожие товары
![2SK2225-E, Транзистор, N-канал [TO-3PFM]](https://static.chipdip.ru/lib/547/DOC005547835.jpg)
![AUIRF2804S-7P, Транзистор, Auto Q101 Nкан 40В 320А [D2-PAK-7]](https://static.chipdip.ru/lib/294/DOC005294540.jpg)
![2SJ162, Транзистор, Р-канал, аудио приложения [TO-3P]](https://static.chipdip.ru/lib/234/DOC000234969.jpg)
![AFT05MS006NT1, Транзистор LDMOS, High Ruggedness N-канал, 136-941 МГц, 6 Вт, 7.5 В [PLD-1.5W]](https://static.chipdip.ru/lib/801/DOC004801137.jpg)
