STP80NF55-06

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8 шт. с центрального склада, срок 3 недели

2 670 ֏

от 2 шт. — 2 150 ֏

от 5 шт. — 1 830 ֏

Добавить в корзину 1 шт. на сумму 2 670 ֏

Альтернативные предложения3

Номенклатурный номер: 8007088477

Электроэлемент

RoHS Compliant	Yes
Automotive	No
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Lead Shape	Through Hole
Maximum Continuous Drain Current (A)	80
Maximum Drain Source Resistance (mOhm)	6.5@10V
Maximum Drain Source Voltage (V)	55
Maximum Gate Source Voltage (V)	±20
Maximum Operating Temperature (°C)	175
Maximum Power Dissipation (mW)	300000
Minimum Operating Temperature (°C)	-55
Mounting	Through Hole
Number of Elements per Chip	1
Packaging	Tube
Part Status	Active
PCB changed	3
Pin Count	3
PPAP	No
Process Technology	STripFET II
Product Category	Power MOSFET
Standard Package Name	TO
Supplier Package	TO-220AB
Tab	Tab
Typical Fall Time (ns)	65
Typical Gate Charge @ 10V (nC)	142
Typical Gate Charge @ Vgs (nC)	142@10V
Typical Input Capacitance @ Vds (pF)	4400@25V
Typical Rise Time (ns)	155
Typical Turn-Off Delay Time (ns)	125
Typical Turn-On Delay Time (ns)	27
Maximum Continuous Drain Current	80 A
Maximum Drain Source Resistance	7 mΩ
Maximum Drain Source Voltage	55 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	4V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	300 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Mounting Type	Through Hole
Package Type	TO-220
Series	STripFET II
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	142 nC @ 10 V
Width	4.6mm
Вес, г	2.843