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FDMS86101, Транзистор

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3 770 ֏

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Номенклатурный номер: 8010788531

Бренд: ON Semiconductor***

Описание

Описание Транзистор: N-MOSFET, полевой, 100В, 60А, 104Вт, PQFN8 Характеристики

Категория	Транзистор
Тип	полевой
Вид	MOSFET

Технические параметры

Brand:	onsemi/Fairchild
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	7 ns
Id - Continuous Drain Current:	12.4 A
Manufacturer:	onsemi
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	Power-56-8
Pd - Power Dissipation:	2.5 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	55 nC
Rds On - Drain-Source Resistance:	8 mOhms
Rise Time:	11 ns
Series:	FDMS86101
Subcategory:	MOSFETs
Technology:	Si
Tradename:	PowerTrench
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	27 ns
Typical Turn-On Delay Time:	15 ns
Vds - Drain-Source Breakdown Voltage:	100 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Current - Continuous Drain (Id) @ 25В°C	12.4A(Ta), 60A(Tc)
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	3000pF @ 50V
Manufacturer	ON Semiconductor
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 150В°C(TJ)
Package / Case	8-PowerTDFN
Packaging	Tape & Reel(TR)
Part Status	Active
Power Dissipation (Max)	2.5W(Ta), 104W(Tc)
Rds On (Max) @ Id, Vgs	8 mOhm @ 13A, 10V
Series	PowerTrenchВ®
Supplier Device Package	8-PQFN(5x6)
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	4V @ 250ВµA
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	80 A
Maximum Drain Source Resistance	14 mΩ
Maximum Drain Source Voltage	100 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	104 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Number of Elements per Chip	1
Package Type	PQFN8
Pin Count	8
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	39 nC @ 10 V
Width	6.25mm
Вес, кг	5.36