2N6661, Транзистор: N-MOSFET; полевой; 90В; 1,5А; TO39
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Описание
N-канал 90 В 350 мА (Tj) 6,25 Вт (Tc) сквозное отверстие TO-39
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 350mA (Tj) |
| Drain to Source Voltage (Vdss) | 90V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 24V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| PCN Assembly/Origin | http://www.microchip.com/mymicrochip/NotificationD |
| PCN Design/Specification | http://www.microchip.com/mymicrochip/NotificationD |
| PCN Packaging | http://www.microchip.com/mymicrochip/NotificationD |
| Power Dissipation (Max) | 6.25W (Tc) |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 1A, 10V |
| REACH Status | REACH Unaffected |
| RoHS Status | RoHS non-compliant |
| Supplier Device Package | TO-39 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 1.2V |
| Maximum Continuous Drain Current | 350 mA |
| Maximum Drain Source Resistance | 5 Ω |
| Maximum Drain Source Voltage | 90 V |
| Maximum Gate Source Voltage | 20 V |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 6.25 W |
| Minimum Gate Threshold Voltage | 0.8V |
| Minimum Operating Temperature | -55 °C |
| Number of Elements per Chip | 1 |
| Package Type | TO-39 |
| Pin Count | 3 |
| Series | 2N6661 |
| Transistor Configuration | Single |
| Width | 9.398 Dia.mm |
| Brand: | Microchip Technology |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 500 |
| Forward Transconductance - Min: | 170 mS |
| Id - Continuous Drain Current: | 350 mA |
| Manufacturer: | Microchip |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-39-3 |
| Packaging: | Bulk |
| Pd - Power Dissipation: | 6.25 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Rds On - Drain-Source Resistance: | 4 Ohms |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | FET |
| Typical Turn-Off Delay Time: | 10 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 800 mV |
| Вес, г | 1.06 |
Техническая документация
Datasheet
pdf, 370 КБ
Datasheet 2N6661
pdf, 452 КБ
