FDD3N40TM, Транзистор: N-MOSFET, полевой, 400В, 1,25А, 30Вт, DPAK
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
1 010 ֏
от 10 шт. —
482 ֏
Добавить в корзину 1 шт.
на сумму 1 010 ֏
Альтернативные предложения1
Описание
Описание Транзистор: N-MOSFET, полевой, 400В, 1,25А, 30Вт, DPAK Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 2500 |
| Fall Time | 25 ns |
| Forward Transconductance - Min | 2 S |
| Height | 2.39 mm |
| Id - Continuous Drain Current | 2 A |
| Length | 6.73 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-252-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 30 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 2.8 Ohms |
| Rise Time | 30 ns |
| RoHS | Details |
| Series | FDD3N40 |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 10 ns |
| Typical Turn-On Delay Time | 10 ns |
| Unit Weight | 0.009184 oz |
| Vds - Drain-Source Breakdown Voltage | 400 V |
| Vgs - Gate-Source Voltage | 30 V |
| Width | 6.22 mm |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 25 ns |
| Forward Transconductance - Min: | 2 S |
| Id - Continuous Drain Current: | 2 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | DPAK-3(TO-252-3) |
| Pd - Power Dissipation: | 30 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 6 nC |
| Rds On - Drain-Source Resistance: | 2.8 Ohms |
| REACH - SVHC: | Details |
| Rise Time: | 30 ns |
| Series: | FDD3N40 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 10 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 400 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Вес, г | 0.26 |
Техническая документация
Datasheet
pdf, 540 КБ
Datasheet FDU3N40TU
pdf, 542 КБ
Похожие товары
![2SJ449, Транзистор, Р-канал, [TO-220F]](https://static.chipdip.ru/lib/975/DOC002975537.jpg)
![2SK117-GR, Транзистор, N-канал [TO-92]](https://static.chipdip.ru/lib/235/DOC000235967.jpg)
![2SK2313, Транзистор N-MOSFET 60В 60А 150Вт [TO-3PN]](https://static.chipdip.ru/lib/426/DOC005426402.jpg)
![2SK2056, Транзистор, N-канал [2-10R1A / TO-220FP]](https://static.chipdip.ru/lib/299/DOC005299884.jpg)
![2SK2141, Транзистор, N-канал [TO-220F]](https://static.chipdip.ru/lib/238/DOC000238543.jpg)
