CSD19502Q5BT, MOSFET N-Channel, 3.4mOhm 80V
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
NexFET N-Channel Power MOSFETsTexas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Q g and Q d and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
Технические параметры
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 250 |
Fall Time: | 7 ns |
Forward Transconductance - Min: | 88 S |
Id - Continuous Drain Current: | 100 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | VSON-CLIP-8 |
Pd - Power Dissipation: | 195 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 48 nC |
Rds On - Drain-Source Resistance: | 4.1 mOhms |
Rise Time: | 6 ns |
Series: | CSD19502Q5B |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 22 ns |
Typical Turn-On Delay Time: | 8 ns |
Vds - Drain-Source Breakdown Voltage: | 80 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.2 V |
Channel Mode | Enhancement |
Channel Type | N |
Forward Diode Voltage | 1V |
Maximum Continuous Drain Current | 157 A |
Maximum Drain Source Resistance | 4.8 mΩ |
Maximum Drain Source Voltage | 80 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Gate Threshold Voltage | 3.3V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 195 W |
Minimum Gate Threshold Voltage | 2.2V |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | VSON-CLIP |
Pin Count | 8 |
Series | NexFET |
Transistor Configuration | Single |
Typical Gate Charge @ Vgs | 130 nC @ 10 V |
Width | 5.1mm |
Вес, г | 0.13 |
Техническая документация
Datasheet
pdf, 1680 КБ
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