CSD18540Q5BT, Транзистор N-MOSFET, полевой, 60В, 100А, 188Вт, VSON-CLIP8 5x6мм
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
3 510 ֏
от 10 шт. —
2 470 ֏
от 30 шт. —
2 150 ֏
Добавить в корзину 1 шт.
на сумму 3 510 ֏
Описание
VSON-CLIP-8(6x5) MOSFETs ROHS
Технические параметры
Brand: | Texas Instruments |
Channel Mode: | Enhancement |
Configuration: | Single |
Development Kit: | BOOSTXL-DRV8305EVM, DRV8704EVM |
Factory Pack Quantity: Factory Pack Quantity: | 500 |
Fall Time: | 3 ns |
Forward Transconductance - Min: | 116 S |
Id - Continuous Drain Current: | 100 A |
Manufacturer: | Texas Instruments |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | VSON-CLIP-8 |
Pd - Power Dissipation: | 188 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 41 nC |
Rds On - Drain-Source Resistance: | 2.2 mOhms |
Rise Time: | 9 ns |
Series: | CSD18540Q5B |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 20 ns |
Typical Turn-On Delay Time: | 6 ns |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
Вес, г | 0.03 |
Похожие товары