CSD13202Q2, Транзистор MOSFET VDFN6
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Описание
NexFET™ Power MOSFETs
Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 13.6 ns |
| Forward Transconductance - Min: | 44 S |
| Id - Continuous Drain Current: | 14.4 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | WSON-6 |
| Pd - Power Dissipation: | 2.7 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 5.1 nC |
| Rds On - Drain-Source Resistance: | 9.3 mOhms |
| Rise Time: | 28 ns |
| Series: | CSD13202Q2 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 11 ns |
| Typical Turn-On Delay Time: | 4.5 ns |
| Vds - Drain-Source Breakdown Voltage: | 12 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 580 mV |
| Brand | Texas Instruments |
| Channel Mode | Depletion |
| Configuration | Single |
| Factory Pack Quantity | 3000 |
| Fall Time | 13.6 ns |
| Forward Transconductance - Min | 44 S |
| Id - Continuous Drain Current | 14.4 A |
| Manufacturer | Texas Instruments |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | WSON-FET-6 |
| Packaging | Reel |
| Pd - Power Dissipation | 2.7 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 5.1 nC |
| Rds On - Drain-Source Resistance | 9.3 mOhms |
| Rise Time | 28 ns |
| RoHS | Details |
| Series | CSD13202Q2 |
| Technology | Si |
| Tradename | NexFET |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 11 ns |
| Typical Turn-On Delay Time | 4.5 ns |
| Vds - Drain-Source Breakdown Voltage | 12 V |
| Vgs - Gate-Source Voltage | 8 V |
| Vgs th - Gate-Source Threshold Voltage | 800 mV |
| Channel Type | N Channel |
| Drain Source On State Resistance | 0.0075Ом |
| Power Dissipation | 2.7Вт |
| Количество Выводов | 6вывод(-ов) |
| Максимальная Рабочая Температура | 150°C |
| Монтаж транзистора | Surface Mount |
| Напряжение Измерения Rds(on) | 4.5В |
| Напряжение Истока-стока Vds | 12В |
| Непрерывный Ток Стока | 22А |
| Полярность Транзистора | N Канал |
| Пороговое Напряжение Vgs | 800мВ |
| Рассеиваемая Мощность | 2.7Вт |
| Сопротивление во Включенном Состоянии Rds(on) | 0.0075Ом |
| Стиль Корпуса Транзистора | WSON |
| Уровень Чувствительности к Влажности (MSL) | MSL 1-Безлимитный |
| Вес, г | 0.04 |
Техническая документация
Datasheet CSD13202Q2
pdf, 834 КБ
