CSD18502Q5B, VSON-CLIP-8(6x5) MOSFETs
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см. техническую документацию
см. техническую документацию
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Описание
Power Field-Effect Transistor, 26A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Технические параметры
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 204 A |
Maximum Drain Source Resistance | 3.3 mΩ |
Maximum Drain Source Voltage | 40 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Gate Threshold Voltage | 2.2V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 3.2 W |
Minimum Gate Threshold Voltage | 1.5V |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | VSON-CLIP |
Pin Count | 8 |
Series | NexFET |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 25 nC @ 4.5 V |
Width | 5.1mm |
Automotive | No |
Maximum Continuous Drain Current - (A) | 26 |
Maximum Drain Source Resistance - (mOhm) | 2.3@10V |
Maximum Drain Source Voltage - (V) | 40 |
Maximum Gate Source Voltage - (V) | ??20 |
Maximum Gate Threshold Voltage - (V) | 2.2 |
Maximum Power Dissipation - (mW) | 3200 |
Military | No |
Operating Temperature - (??C) | -55~150 |
Packaging | Tape and Reel |
Process Technology | NexFET |
Standard Package Name | SON |
Supplier Package | VSON-CLIP EP |
Typical Gate Charge @ 10V - (nC) | 52 |
Typical Gate Charge @ Vgs - (nC) | 25@4.5VI52@10V |
Typical Input Capacitance @ Vds - (pF) | 3900@20V |
Вес, г | 0.21 |
Техническая документация
Datasheet
pdf, 1680 КБ
Документация
pdf, 1004 КБ
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