Главная › Электронные компоненты › Транзисторы › Полевые (FETs, MOSFETs) › Texas Instruments › CSD18532NQ5B, SON-8(6x5) MOSFETs

CSD18532NQ5B, SON-8(6x5) MOSFETs

Изображения служат только для ознакомления,
см. техническую документацию

2 280 ֏

от 10 шт. — 1 580 ֏

Добавить в корзину 1 шт. на сумму 2 280 ֏

Номенклатурный номер: 8017658843

Бренд: Texas Instruments

Описание

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Технические параметры

Brand:	Texas Instruments
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	2.7 ns
Forward Transconductance - Min:	140 S
Id - Continuous Drain Current:	151 A
Manufacturer:	Texas Instruments
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	VSON-CLIP-8
Pd - Power Dissipation:	156 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	49 nC
Rds On - Drain-Source Resistance:	3.4 mOhms
Rise Time:	8.7 ns
Series:	CSD18532NQ5B
Subcategory:	MOSFETs
Technology:	Si
Tradename:	NexFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	20 ns
Typical Turn-On Delay Time:	8.2 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2.4 V
Вес, г	0.15