CSD17304Q3, Транзистор N-канал 30В 56А Q3
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Описание
транзисторы полевые импортные
NexFET™ Power MOSFETsTexas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Технические параметры
| Структура | N-канал | |
| Brand: | Texas Instruments | |
| Channel Mode: | Enhancement | |
| Configuration: | Single | |
| Development Kit: | TPS65090EVM | |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 | |
| Fall Time: | 3.1 ns | |
| Forward Transconductance - Min: | 48 S | |
| Id - Continuous Drain Current: | 56 A | |
| Manufacturer: | Texas Instruments | |
| Maximum Operating Temperature: | +150 C | |
| Minimum Operating Temperature: | -55 C | |
| Mounting Style: | SMD/SMT | |
| Number of Channels: | 1 Channel | |
| Package / Case: | VSON-CLIP-8 | |
| Pd - Power Dissipation: | 2.7 W | |
| Product Category: | MOSFET | |
| Product Type: | MOSFET | |
| Qg - Gate Charge: | 5.1 nC | |
| Rds On - Drain-Source Resistance: | 7.5 mOhms | |
| Rise Time: | 9.1 ns | |
| Series: | CSD17304Q3 | |
| Subcategory: | MOSFETs | |
| Technology: | Si | |
| Tradename: | NexFET | |
| Transistor Polarity: | N-Channel | |
| Transistor Type: | 1 N-Channel | |
| Type: | Power MOSFET | |
| Typical Turn-Off Delay Time: | 10.4 ns | |
| Typical Turn-On Delay Time: | 5.1 ns | |
| Vds - Drain-Source Breakdown Voltage: | 30 V | |
| Vgs - Gate-Source Voltage: | -8 V, +8 V | |
| Vgs th - Gate-Source Threshold Voltage: | 900 mV | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 3.9mΩ@10V | |
| Drain Source Voltage (Vdss) | 30V | |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.2V | |
| Type | N Channel | |
| Current - Continuous Drain (Id) @ 25В°C | 15A(Ta), 56A(Tc) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Drive Voltage (Max Rds On, Min Rds On) | 3V, 8V | |
| FET Type | N-Channel | |
| Gate Charge (Qg) (Max) @ Vgs | 6.6nC @ 4.5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 955pF @ 15V | |
| Manufacturer | Texas Instruments | |
| Mounting Type | Surface Mount | |
| Operating Temperature | -55В°C ~ 150В°C(TJ) | |
| Package / Case | 8-PowerTDFN | |
| Packaging | Tape & Reel(TR) | |
| Part Status | Active | |
| Power Dissipation (Max) | 2.7W(Ta) | |
| Rds On (Max) @ Id, Vgs | 7.5 mOhm @ 17A, 8V | |
| Series | NexFETв(ў | |
| Supplier Device Package | 8-VSON-CLIP(3.3x3.3) | |
| Technology | MOSFET(Metal Oxide) | |
| Vgs (Max) | +10V, -8V | |
| Vgs(th) (Max) @ Id | 1.8V @ 250ВµA | |
| Вес, г | 0.228 |
Техническая документация
Datasheet CSD17304Q3
pdf, 367 КБ
