CSD17308Q3T, Транзистор N-канал 30В 50A Q3
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Описание
транзисторы полевые импортные
N-канал 30 В, 14 А (Ta), 44 А (Tc) 2,7 Вт (Ta), 28 Вт (Tc) Поверхностный монтаж 8-VSON-CLIP (3,3x3,3)
Технические параметры
| Структура | N-канал | |
| Base Product Number | CSD17308 -> | |
| Current - Continuous Drain (Id) @ 25В°C | 14A (Ta), 44A (Tc) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Drive Voltage (Max Rds On, Min Rds On) | 3V, 8V | |
| ECCN | EAR99 | |
| FET Type | N-Channel | |
| Gate Charge (Qg) (Max) @ Vgs | 5.1nC @ 4.5V | |
| HTSUS | 8541.29.0095 | |
| Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 15V | |
| Manufacturer Product Page | http://www.ti.com/general/docs/suppproductinfo.tsp | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Mounting Type | Surface Mount | |
| Operating Temperature | -55В°C ~ 150В°C (TJ) | |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® | |
| Package / Case | 8-PowerTDFN | |
| Power Dissipation (Max) | 2.7W (Ta), 28W (Tc) | |
| Rds On (Max) @ Id, Vgs | 10.3mOhm @ 10A, 8V | |
| REACH Status | REACH Affected | |
| RoHS Status | ROHS3 Compliant | |
| Series | NexFETв„ў -> | |
| Supplier Device Package | 8-VSON-CLIP (3.3x3.3) | |
| Technology | MOSFET (Metal Oxide) | |
| Vgs (Max) | +10V, -8V | |
| Vgs(th) (Max) @ Id | 1.8V @ 250ВµA | |
| Brand: | Texas Instruments | |
| Channel Mode: | Enhancement | |
| Configuration: | Single | |
| Factory Pack Quantity: Factory Pack Quantity: | 250 | |
| Fall Time: | 2.3 ns | |
| Forward Transconductance - Min: | 37 S | |
| Id - Continuous Drain Current: | 60 A | |
| Manufacturer: | Texas Instruments | |
| Maximum Operating Temperature: | +150 C | |
| Minimum Operating Temperature: | -55 C | |
| Mounting Style: | SMD/SMT | |
| Number of Channels: | 1 Channel | |
| Package/Case: | VSON-CLIP-8 | |
| Pd - Power Dissipation: | 28 W | |
| Product Category: | MOSFET | |
| Product Type: | MOSFET | |
| Qg - Gate Charge: | 3.9 nC | |
| Rds On - Drain-Source Resistance: | 11.8 mOhms | |
| Rise Time: | 5.7 ns | |
| Series: | CSD17308Q3 | |
| Subcategory: | MOSFETs | |
| Technology: | Si | |
| Tradename: | NexFET | |
| Transistor Polarity: | N-Channel | |
| Transistor Type: | 1 N-Channel | |
| Typical Turn-Off Delay Time: | 9.9 ns | |
| Typical Turn-On Delay Time: | 4.5 ns | |
| Vds - Drain-Source Breakdown Voltage: | 30 V | |
| Vgs - Gate-Source Voltage: | -10 V, +10 V, -8 V, +8 V | |
| Vgs th - Gate-Source Threshold Voltage: | 1.3 V | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 14 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | VSON-CLIP | |
| Automotive | No | |
| Channel Mode | Enhancement | |
| Configuration | Single Quad Drain Triple Source | |
| ECCN (US) | EAR99 | |
| EU RoHS | Compliant with Exemption | |
| Lead Shape | No Lead | |
| Maximum Continuous Drain Current (A) | 50 | |
| Maximum Drain Source Resistance (mOhm) | 10.3@8V | |
| Maximum Drain Source Voltage (V) | 30 | |
| Maximum Gate Source Leakage Current (nA) | 100 | |
| Maximum Gate Source Voltage (V) | 10 | |
| Maximum Gate Threshold Voltage (V) | 1.8 | |
| Maximum IDSS (uA) | 1 | |
| Maximum Operating Temperature (°C) | 150 | |
| Maximum Power Dissipation (mW) | 2700 | |
| Minimum Operating Temperature (°C) | -55 | |
| Mounting | Surface Mount | |
| Number of Elements per Chip | 1 | |
| Packaging | Tape and Reel | |
| Part Status | Active | |
| PCB changed | 8 | |
| Pin Count | 8 | |
| PPAP | No | |
| Process Technology | NexFET | |
| Product Category | Power MOSFET | |
| Standard Package Name | SON | |
| Supplier Package | VSON-CLIP EP | |
| Typical Fall Time (ns) | 2.3 | |
| Typical Gate Charge @ Vgs (nC) | 3.9@4.5V | |
| Typical Gate Threshold Voltage (V) | 1.3 | |
| Typical Gate to Drain Charge (nC) | 0.8 | |
| Typical Input Capacitance @ Vds (pF) | 540@15V | |
| Typical Rise Time (ns) | 5.7 | |
| Typical Turn-Off Delay Time (ns) | 9.9 | |
| Typical Turn-On Delay Time (ns) | 4.5 | |
| Вес, г | 0.07 |
