CSD17309Q3, Транзистор N-канал 30В 30A Q3
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Описание
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Texas Instruments NexFET™ Power MOSFETThe Texas Instruments N-Channel NexFET™ Power MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.
Технические параметры
| Структура | N-канал | |
| Brand: | Texas Instruments | |
| Channel Mode: | Enhancement | |
| Configuration: | Single | |
| Development Kit: | DLPDLCR4710EVM-G2, TPS65982-EVM, TPS65983EVM | |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 | |
| Fall Time: | 3.6 ns | |
| Forward Transconductance - Min: | 67 S | |
| Id - Continuous Drain Current: | 60 A | |
| Manufacturer: | Texas Instruments | |
| Maximum Operating Temperature: | +150 C | |
| Minimum Operating Temperature: | -55 C | |
| Mounting Style: | SMD/SMT | |
| Number of Channels: | 1 Channel | |
| Package/Case: | VSON-CLIP-8 | |
| Pd - Power Dissipation: | 2.8 W | |
| Product Category: | MOSFET | |
| Product Type: | MOSFET | |
| Qg - Gate Charge: | 7.5 nC | |
| Rds On - Drain-Source Resistance: | 5.4 mOhms | |
| Rise Time: | 9.9 ns | |
| Series: | CSD17309Q3 | |
| Subcategory: | MOSFETs | |
| Technology: | Si | |
| Tradename: | NexFET | |
| Transistor Polarity: | N-Channel | |
| Transistor Type: | 1 N-Channel | |
| Type: | Power MOSFET | |
| Typical Turn-Off Delay Time: | 13.2 ns | |
| Typical Turn-On Delay Time: | 6.1 ns | |
| Vds - Drain-Source Breakdown Voltage: | 30 V | |
| Vgs - Gate-Source Voltage: | -8 V, +8 V | |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V | |
| Brand | Texas Instruments | |
| Configuration | Single | |
| Factory Pack Quantity | 2500 | |
| Fall Time | 3.6 ns | |
| Height | 1 mm | |
| Id - Continuous Drain Current | 60 A | |
| Length | 3.3 mm | |
| Manufacturer | Texas Instruments | |
| Maximum Operating Temperature | +150 C | |
| Minimum Operating Temperature | -55 C | |
| Mounting Style | SMD/SMT | |
| Number of Channels | 1 Channel | |
| Package / Case | VSON-Clip-8 | |
| Packaging | Cut Tape | |
| Pd - Power Dissipation | 2.8 W | |
| Product Category | MOSFET | |
| Qg - Gate Charge | 7.5 nC | |
| Rds On - Drain-Source Resistance | 6.3 mOhm | |
| Rise Time | 9.9 ns | |
| RoHS | Details | |
| Series | CSD17309Q3 | |
| Technology | Si | |
| Tradename | NexFET | |
| Transistor Polarity | N-Channel | |
| Transistor Type | 1 N-Channel | |
| Type | Power MOSFET | |
| Vds - Drain-Source Breakdown Voltage | 30 V | |
| Vgs - Gate-Source Voltage | 10 V | |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V | |
| Width | 3.3 mm | |
| Вес, г | 1 |
Техническая документация
Datasheet CSD17309Q3
pdf, 440 КБ
Документация
pdf, 411 КБ
