CSD18537NQ5A, Транзистор N-канал 60В 50A Q5A
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Описание
транзисторы полевые импортные
NexFET™ Power MOSFETsTexas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Технические параметры
| Структура | N-канал | |
| Brand: | Texas Instruments | |
| Channel Mode: | Enhancement | |
| Configuration: | Single | |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 | |
| Fall Time: | 3.2 ns | |
| Forward Transconductance - Min: | 62 S | |
| Id - Continuous Drain Current: | 50 A | |
| Manufacturer: | Texas Instruments | |
| Maximum Operating Temperature: | +150 C | |
| Minimum Operating Temperature: | -55 C | |
| Mounting Style: | SMD/SMT | |
| Number of Channels: | 1 Channel | |
| Package / Case: | VSONP-8 | |
| Pd - Power Dissipation: | 3.2 W | |
| Product Category: | MOSFET | |
| Product Type: | MOSFET | |
| Qg - Gate Charge: | 14 nC | |
| Rds On - Drain-Source Resistance: | 13 mOhms | |
| Rise Time: | 4 ns | |
| Series: | CSD18537NQ5A | |
| Subcategory: | MOSFETs | |
| Technology: | Si | |
| Tradename: | NexFET | |
| Transistor Polarity: | N-Channel | |
| Transistor Type: | 1 N-Channel | |
| Typical Turn-Off Delay Time: | 14.4 ns | |
| Typical Turn-On Delay Time: | 5.8 ns | |
| Vds - Drain-Source Breakdown Voltage: | 60 V | |
| Vgs - Gate-Source Voltage: | -20 V, +20 V | |
| Vgs th - Gate-Source Threshold Voltage: | 3 V | |
| Transistor Polarity | N Channel; Continuous Drain Current Id | |
| Вес, г | 0.34 |
Техническая документация
Datasheet
pdf, 724 КБ
