Silicon N-Channel MOSFET, 150 mA, 250 V, 3-Pin TO-92 TN5325K1-G

Фото 1/2 Silicon N-Channel MOSFET, 150 mA, 250 V, 3-Pin TO-92 TN5325K1-G
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см. техническую документацию
960 ֏
Кратность заказа 25 шт.
Добавить в корзину 25 шт. на сумму 24 000 ֏
Номенклатурный номер: 8018821774

Описание

Semiconductors\Discrete Semiconductors\MOSFETs
The Microchip TN5325 series of low-threshold, enhancement-mode (normally-off) transistor utilize a vertical DMOS structure and a well-proven silicon gate manufacturing process.

Технические параметры

Channel Mode Enhancement
Channel Type N
Maximum Continuous Drain Current 150 mA
Maximum Drain Source Voltage 250 V
Maximum Gate Threshold Voltage 2V
Mounting Type Through Hole
Number of Elements per Chip 1
Package Type TO-92
Pin Count 3
Series TN5325
Transistor Material Silicon
Brand: Microchip Technology
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 3000
Fall Time: 15 ns
Forward Transconductance - Min: 150 mS
Id - Continuous Drain Current: 150 mA
Manufacturer: Microchip
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package / Case: SOT-23-3
Pd - Power Dissipation: 360 mW
Product Category: MOSFET
Product Type: MOSFET
Product: MOSFET Small Signal
Rds On - Drain-Source Resistance: 7 Ohms
Rise Time: 15 ns
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Type: FET
Typical Turn-Off Delay Time: 25 ns
Typical Turn-On Delay Time: 20 ns
Vds - Drain-Source Breakdown Voltage: 250 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 600 mV
Вес, г 1

Техническая документация

Datasheet
pdf, 543 КБ
Datasheet TN5325N3-G
pdf, 845 КБ