Silicon N-Channel MOSFET, 150 mA, 250 V, 3-Pin TO-92 TN5325K1-G
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см. техническую документацию
см. техническую документацию
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Описание
Semiconductors\Discrete Semiconductors\MOSFETs
The Microchip TN5325 series of low-threshold, enhancement-mode (normally-off) transistor utilize a vertical DMOS structure and a well-proven silicon gate manufacturing process.
Технические параметры
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 150 mA |
Maximum Drain Source Voltage | 250 V |
Maximum Gate Threshold Voltage | 2V |
Mounting Type | Through Hole |
Number of Elements per Chip | 1 |
Package Type | TO-92 |
Pin Count | 3 |
Series | TN5325 |
Transistor Material | Silicon |
Brand: | Microchip Technology |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 15 ns |
Forward Transconductance - Min: | 150 mS |
Id - Continuous Drain Current: | 150 mA |
Manufacturer: | Microchip |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | SOT-23-3 |
Pd - Power Dissipation: | 360 mW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Product: | MOSFET Small Signal |
Rds On - Drain-Source Resistance: | 7 Ohms |
Rise Time: | 15 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Type: | FET |
Typical Turn-Off Delay Time: | 25 ns |
Typical Turn-On Delay Time: | 20 ns |
Vds - Drain-Source Breakdown Voltage: | 250 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 600 mV |
Вес, г | 1 |
Техническая документация
Datasheet
pdf, 543 КБ
Datasheet TN5325N3-G
pdf, 845 КБ
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