IRFR9310TRPBF, Транзистор: P-MOSFET, полевой, -400В, -1,1А, 50Вт, DPAK
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
900 ֏
от 34 шт. —
770 ֏
Добавить в корзину 1 шт.
на сумму 900 ֏
Альтернативные предложения1
Описание
Описание Транзистор: P-MOSFET, полевой, -400В, -1,1А, 50Вт, DPAK Характеристики
Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Base Product Number | IRFR9310 -> |
Current - Continuous Drain (Id) @ 25В°C | 1.8A (Tc) |
Drain to Source Voltage (Vdss) | 400V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
ECCN | EAR99 |
FET Type | P-Channel |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
HTSUS | 8541.29.0095 |
Input Capacitance (Ciss) (Max) @ Vds | 270pF @ 25V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Surface Mount |
Operating Temperature | -55В°C ~ 150В°C (TJ) |
Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Power Dissipation (Max) | 50W (Tc) |
Rds On (Max) @ Id, Vgs | 7Ohm @ 1.1A, 10V |
RoHS Status | ROHS3 Compliant |
Supplier Device Package | D-Pak |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | В±20V |
Vgs(th) (Max) @ Id | 4V @ 250ВµA |
Channel Mode | Enhancement |
Channel Type | P |
Configuration | Single |
ECCN (US) | EAR99 |
EU RoHS | Compliant with Exemption |
Material | Si |
Maximum Continuous Drain Current (A) | 1.8 |
Maximum Diode Forward Voltage (V) | 4 |
Maximum Drain Source Resistance (mOhm) | 7000 10V |
Maximum Drain Source Voltage (V) | 400 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Gate Threshold Voltage (V) | 4 |
Maximum IDSS (uA) | 100 |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 50 |
Maximum Operating Temperature (°C) | 150 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Power Dissipation (mW) | 50000 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 7.2 |
Minimum Gate Threshold Voltage (V) | 2 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Operating Junction Temperature (°C) | -55 to 150 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 2 |
Pin Count | 3 |
Product Category | Power MOSFET |
Standard Package Name | TO-252 |
Supplier Package | DPAK |
Tab | Tab |
Typical Fall Time (ns) | 24 |
Typical Gate Charge @ 10V (nC) | 13(Max) |
Typical Gate Charge @ Vgs (nC) | 13(Max) 10V |
Typical Gate Plateau Voltage (V) | 5.1 |
Typical Gate to Drain Charge (nC) | 5(Max) |
Typical Gate to Source Charge (nC) | 3.2(Max) |
Typical Input Capacitance @ Vds (pF) | 270 25V |
Typical Output Capacitance (pF) | 50 |
Typical Reverse Recovery Charge (nC) | 640 |
Typical Reverse Recovery Time (ns) | 170 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 8 25V |
Typical Rise Time (ns) | 10 |
Typical Turn-Off Delay Time (ns) | 25 |
Typical Turn-On Delay Time (ns) | 11 |
Вес, г | 3 |
Техническая документация
Datasheet IRFR9310TRPBF
pdf, 266 КБ
Datasheet IRFR9310TRPBF
pdf, 256 КБ